| PART |
Description |
Maker |
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA)
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HY5DU121622ALT-J |
DDR SDRAM - 512Mb
|
Hynix Semiconductor
|
| HY5DU121622DF HY5DU121622DFP |
512Mb DDR SDRAM
|
Hynix Semiconductor
|
| NT5DS128M4CG |
512Mb DDR SDRAM
|
Nanya Techology
|
| H5DU5162EFR-E3J H5DU5162EFR-FAJ H5DU5162EFR-J3J H5 |
512Mb DDR SDRAM
|
Hynix Semiconductor
|
| HYMD564M646BLP6-D43 |
DDR SDRAM - SO DIMM 512MB
|
Hynix Semiconductor
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMD264646A8J |
DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
